MOSFETs

Results: 57



#Item
11Thermal Overstress Aging of Discrete Power MOSFETS Author/Contact: José R. Celaya (April, 2016) Experimental Description:

Thermal Overstress Aging of Discrete Power MOSFETS Author/Contact: José R. Celaya (April, 2016) Experimental Description:

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Source URL: ti.arc.nasa.gov

Language: English - Date: 2016-04-11 20:06:45
    12Metal-insulator transition in silicon MOSFETs: new viewpoint V.T. Dolgopolov Institute of Solid State Physics RAS, Chernogolovka,Russia

    Metal-insulator transition in silicon MOSFETs: new viewpoint V.T. Dolgopolov Institute of Solid State Physics RAS, Chernogolovka,Russia

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    Source URL: meso03.itp.ac.ru

    Language: English - Date: 2003-07-01 04:19:55
      13MD 108T DUAL MATRIX EYE TUBE TUNING 3 ULTRA SENSITIVE BANDWIDTH SETTINGS LOW NOISE DUAL GATE MOSFETS CUSTOM TORROIDAL TRANSFORMERS 6 STAGE TUNING FRONT END

      MD 108T DUAL MATRIX EYE TUBE TUNING 3 ULTRA SENSITIVE BANDWIDTH SETTINGS LOW NOISE DUAL GATE MOSFETS CUSTOM TORROIDAL TRANSFORMERS 6 STAGE TUNING FRONT END

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      Source URL: www.magnumdynalab.com

      Language: English - Date: 2015-09-02 21:18:37
        14Valley polarisation assisted spin polarisation in Si MOSFETs Vincent Renard Universite´ Grenoble Alpes / CEA INAC

        Valley polarisation assisted spin polarisation in Si MOSFETs Vincent Renard Universite´ Grenoble Alpes / CEA INAC

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        Source URL: intgroup.itp.ac.ru

        Language: English - Date: 2015-07-22 13:16:34
          15SI96-13 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS Transient Protection of MOSFETS

          SI96-13 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS Transient Protection of MOSFETS

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          Source URL: www.semtech.com

          Language: English - Date: 2013-04-03 13:11:08
          16SISPAD 2012, September 5-7, 2012, Denver, CO, USA Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive Switching (UIS) Stress Condition **Karuna Nidhia, **Neelam Agarwala, Shao-

          SISPAD 2012, September 5-7, 2012, Denver, CO, USA Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive Switching (UIS) Stress Condition **Karuna Nidhia, **Neelam Agarwala, Shao-

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          Source URL: in4.iue.tuwien.ac.at

          Language: English - Date: 2013-02-12 08:39:10
            17SISPAD 2012, September 5-7, 2012, Denver, CO, USA Interplay between the Electrical and Thermal Transport of Silicon Nanoscale MOSFETs Mohamed Mohamed, Zlatan Aksamija, Wolfgang Vitale, Fawad Hassan and Umberto Ravaioli,

            SISPAD 2012, September 5-7, 2012, Denver, CO, USA Interplay between the Electrical and Thermal Transport of Silicon Nanoscale MOSFETs Mohamed Mohamed, Zlatan Aksamija, Wolfgang Vitale, Fawad Hassan and Umberto Ravaioli,

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            Source URL: in4.iue.tuwien.ac.at

            Language: English - Date: 2013-02-12 08:39:12
              18SI96-13 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS Transient Protection of MOSFETS

              SI96-13 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS Transient Protection of MOSFETS

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              Source URL: www.semtech.com

              Language: English - Date: 2013-04-03 13:11:08
              19SISPAD 2012, September 5-7, 2012, Denver, CO, USA Numerical study of variability of technological parameters on remote coulomb scattering in nanowire MOSFETs J. Dura1,2, F. Triozon1, D. Munteanu2, S. Barraud1, S. Martin

              SISPAD 2012, September 5-7, 2012, Denver, CO, USA Numerical study of variability of technological parameters on remote coulomb scattering in nanowire MOSFETs J. Dura1,2, F. Triozon1, D. Munteanu2, S. Barraud1, S. Martin

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              Source URL: in4.iue.tuwien.ac.at

              Language: English - Date: 2013-02-12 08:39:12
                20SISPAD 2012, September 5-7, 2012, Denver, CO, USA A TCAD Study of Substrate Dopant for Extremely Thin SOI MOSFETs with Ultra-Thin Buried Oxide Hao WU, Xiaodong TONG, Miao XU, Weiping XIAO, Binneng WU, Huilong ZHU, Qingq

                SISPAD 2012, September 5-7, 2012, Denver, CO, USA A TCAD Study of Substrate Dopant for Extremely Thin SOI MOSFETs with Ultra-Thin Buried Oxide Hao WU, Xiaodong TONG, Miao XU, Weiping XIAO, Binneng WU, Huilong ZHU, Qingq

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                Source URL: in4.iue.tuwien.ac.at

                Language: English - Date: 2013-02-12 08:39:03