Computational Electronics / McGraw-Hill Book Company / T. C. Hsiao N. A. / / /
Facility
University of Southern California / Information Sciences Institute / San Jose State University / / /
IndustryTerm
intrinsic carrier concentration charge / long and short channel devices / simulation tool / asymptotic solution / semiconductor devices / analytical solutions / nano scale devices / SPICE software / metal oxide semiconductor field effect transistor / important evolution in device / half micrometer technology / short channel device / long channel device / enough applications / /
OperatingSystem
Fermi / /
Organization
Graduate School / Information Sciences Institute / University of Southern California / Department of Mathematics / San Jose State University / San Jose / /
Person
J. Kervorkian / John Wiley / E. Cumberbatch / V / Rey / / /
Position
semi-conductor / /
ProvinceOrState
Southern California / New York / /
Region
Southern California / /
Technology
semiconductor / SOI technologies / a half micrometer technology / a half micrometer SOS technology / semiconductor devices / dielectric / simulation / /
1 Analytical Results for the I-V Characteristics of a Fully Depleted SOI-MOSFET H. Morris, E. Cumberbatch, V. Tyree, H. Abebe Abstract: Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the