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Transistors / Annealing / Silicon monoxide / High-k dielectric / Layer / Silicon dioxide / Silicide / Photoemission spectroscopy / Chemistry / Semiconductor device fabrication / Silicon compounds


Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002 Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate
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Document Date: 2010-01-05 10:32:21

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City

Tokyo / /

Country

Japan / /

Currency

pence / /

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Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

large energy-band gap / lower binding energy / metal / higher binding energy / ultralarge scale integration device applications / chemical states / conventional complementary metal / /

Organization

University of Tokyo / High-Energy Accelerator Organization / /

Technology

semiconductor / crystallization / spectroscopy / radiation / dielectric / /

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