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Chemistry / Silicon / Thermal oxidation / Wafer / Silicon on insulator / Epitaxy / Ion implantation / Silicon dioxide / LOCOS / Semiconductor device fabrication / Materials science / Microtechnology


Surface and Interface 4C/2002G062 Ordered structure in the internal thermal oxide layer of SIMOX wafers Takayoshi SHIMURA*1, Kazunori FUKUDA1, Kiyoshi YASUTAKE1, and
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Document Date: 2010-01-05 10:30:29

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File Size: 47,93 KB

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City

Osaka / /

Country

Japan / /

/

Facility

Osaka University / Fukui University of Technology / Photon Factory / /

IndustryTerm

metal oxide semiconductor / /

Organization

Department of Management Science / Fukui University / Graduate School / Department of Material and Life Science / Osaka University / Faculty of Engineering / /

Technology

semiconductor / X-ray / /

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