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Technology / Microelectromechanical systems / Etching / Wafer / Microfabrication / Deep reactive-ion etching / Chemical-mechanical planarization / Thermal oxidation / Silicon on insulator / Semiconductor device fabrication / Materials science / Microtechnology


A new low-temperature high-aspect-ratio MEMS process using plasma activated wafer bonding
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Document Date: 2013-09-17 15:11:17


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File Size: 1,79 MB

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Company

Surface Technology Systems / IOP Publishing Ltd / Nikon / RCA / Wireless Integrated Microsystems / /

Country

United Kingdom / /

Currency

USD / /

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Facility

University of Michigan / /

IndustryTerm

process technologies / high gas flow / gas flow / incident gas species / gas species / carrier wafer / guard devices / carrier layer / wet chemical means / aspectratio silicon devices / energy / metal / metal layer / chemical reactions / process technology / gas flow rate / chemical mechanical polishing / energy decreases / continuous gas flow / Energy harvesting devices / carrier wafers / wet processing / then be polished using chemical mechanical polishing / /

Organization

University of Michigan / /

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Position

guard / /

ProvinceOrState

Pennsylvania / /

Technology

semiconductor / radiation / SOI technology / chemical mechanical polishing / Lithography / SOS process technology / MEMS / dielectric / process technologies / /

URL

http /

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