<--- Back to Details
First PageDocument Content
Manufacturing / Chemistry / Matter / Light-emitting diode / Signage / Resist / Diode / Silicon carbide
Date: 2015-04-13 04:30:56
Manufacturing
Chemistry
Matter
Light-emitting diode
Signage
Resist
Diode
Silicon carbide

US006869814B2United States Patent (10) Patent N0.: (45) Date of Patent:

Add to Reading List

Source URL: www.sci.hkbu.edu.hk

Download Document from Source Website

File Size: 835,09 KB

Share Document on Facebook

Similar Documents

New Discoveries About SiC Mobility: Transistors made from silicon carbide (SiC) can operate at higher temperatures and/or voltages than silicon devices, making them a good fit for power-management applications. However,

DocID: 1usKM - View Document

US006869814B2United States Patent (10) Patent N0.: (45) Date of Patent:

US006869814B2United States Patent (10) Patent N0.: (45) Date of Patent:

DocID: 1rr93 - View Document

Technical Data Sheet Product 2701 Loctite UK Limited, Watchmead, Welwyn Garden City, Herts, AL7 1JB Technical Services Tel: (

Technical Data Sheet Product 2701 Loctite UK Limited, Watchmead, Welwyn Garden City, Herts, AL7 1JB Technical Services Tel: (

DocID: 1re5T - View Document

MATEC Web of Conferences 30, DOI: m atec conf 13  C Owned by the authors, published by EDP Sciences, 2015  Thermal and Mechanical Properties of Poly(butylene succinate) Films

MATEC Web of Conferences 30, DOI: m atec conf 13  C Owned by the authors, published by EDP Sciences, 2015 Thermal and Mechanical Properties of Poly(butylene succinate) Films

DocID: 1qZB8 - View Document

PUBLICATIONS Geochemistry, Geophysics, Geosystems RESEARCH ARTICLE2013GC005138 Key Points:  In the mantle, C isotope fractionation

PUBLICATIONS Geochemistry, Geophysics, Geosystems RESEARCH ARTICLE2013GC005138 Key Points:  In the mantle, C isotope fractionation

DocID: 1qKI7 - View Document