ion-trap chip / room-temperature background gas / motional energy / quantum processing / carrier transition rate / ion-trap quantum information processing / ceramic chip carrier / monolithic chip using semiconductor micro-electromechanical systems / quantum information processing / ONLINE PUBLICATION / semiconductor fabrication technology / chip carrier / semiconductor chip / integrated ion-trap chip / microelectronic chip / atom chips / chip carrier electrodes / quantum computing / energy / /
Organization
Army Research Office / University of Michigan / Ann Arbor / FOCUS Center / National Science Foundation / Cambridge Univ. / US Advanced Research and Development Activity and National Security Agency / Department of Physics / /
LETTERS Ion trap in a semiconductor chip D. STICK1 *, W. K. HENSINGER1 , S. OLMSCHENK1 , M. J. MADSEN1 , K. SCHWAB2 AND C. MONROE1 1