| Document Date: 2007-07-14 18:52:27
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City Honolulu / New York / / Company Jet Propulsion Laboratory / NVMs / Motorola / Intel / T. J. Watson Laboratory / / Country Montserrat / / Currency USD / / / Facility T. J. Watson Laboratory of Applied Physics / Jet Propulsion Laboratory / California Institute of Technology / / IndustryTerm technology performance / flight data systems / conventional flash technology / aerospace applications / technology shares / technology investigations / energy level / actual prototype devices / feasible solution / subseand processing steps / nanocrystal nonvolatile floating-gate memory devices / metal-oxide-silicon structures / technology characteristics / flash memory technology / metal oxide semiconductor / memory technology / storage density solutions / chemical vapor deposition / microelectromechanical systems / well defined energy levels / low-energy / space applications / unisng low-energy / metal contact deposition / control devices / / Organization California Institute of Technology / ON NC / National Aeronautics and Space Administration / / Person L. Douglas Bell / Mihail P. Petkov / / / Technology semiconductor / Radiation / conventional flash technology / microelectromechanical systems / MEMS / Non-Volatile Memory Technology / flash memory / Ferroelectric memory technology / competing NVM technologies / Si technology / dielectric / flash NVM technology / Si NVM technology / random access / Flash Memory Technology / nonvolatile memory / Si technologies / Digital Object Identifier / flash / NVM technologies / chemical vapor deposition / /
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3822 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 51, NO. 6, DECEMBER 2004 High Total Dose Tolerance of Prototype Silicon Nanocrystal Non-Volatile Memory Cells