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Semiconductor devices / Digital electronics / Integrated circuits / MOSFET / 11 nanometer / Indium gallium arsenide / Gate oxide / International Electron Devices Meeting / Transistor / Electronic engineering / Electronics / Chemistry


[removed]A New Self-Aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process
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Document Date: 2014-04-22 16:21:50

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File Size: 1,52 MB

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Cl2 / /

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Lg / Intel / Microsystems Technology Laboratories / /

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tight metal contact spacing / /

Organization

National Science Foundation / MIT / /

Person

Tao Yu / Jesús A. del Alamo / Dimitri A. Antoniadis / Xin Zhao / Mo etch / Mo (d) W Mo / /

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V / /

ProvinceOrState

Missouri / /

Technology

lithography / simulation / CVD / dielectric / /

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