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Emerging technologies / Digital media / Computing / Static random-access memory / Magnetoresistive random access memory / NvSRAM / Resistive random-access memory / Resistor / Phase-change memory / Computer memory / Non-volatile memory / Computer hardware


Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2013, Article ID[removed], 9 pages http://dx.doi.org[removed][removed]Research Article
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Document Date: 2014-05-08 03:49:50


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File Size: 1,89 MB

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City

Article / /

Company

Mentor Graphics Inc. / Volume 2014 Hindawi Publishing Corporation / CLm / Passive Electronic Components 7 First / V(Rm ) First / Ge / Rohm Corporation / Cadence Design Systems Inc. / Rrefb First / Toppan Printing Corporation / CLb / Creative Commons / Synopsys Inc. / CLa(L) CLb(L) M8 M2 (b) SRAM / Hindawi Publishing Corporation / The Scientific World Journal Hindawi Publishing Corporation / Distributed Sensor Networks Hindawi Publishing Corporation / Chemical Engineering Hindawi Publishing Corporation / Civil Engineering Hindawi Publishing Corporation / Robotics Hindawi Publishing Corporation / Vibration Volume 2014 Hindawi Publishing Corporation / Sensors Hindawi Publishing Corporation / /

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Event

Product Recall / Business Partnership / Product Issues / /

Facility

The University of Tokyo / Second store / Store Operation / University of Tokyo / Kanazawa University / /

IndustryTerm

non-volatile memory technology / energy break even time / energy-consuming write/verify cycles / storage technology / energy / write/recall energy / low power operating devices / memory cell technology / bipolar switching device / /

Organization

Faculty of Medicine / Kanazawa University / Japan Faculty of Engineering / University of Tokyo / Graduate School / VLSI Design and Educational Center / /

Person

M. Parris / Kazuya Nakayama / D. Butler / H. Mcnellie / D. Wilson / S. Eaton / /

Position

Academic Editor / Butler / /

Product

Vdd Vdd / mV / operation / write/ / Rrefb First recall Second / First / M-16 / M-9 / Second / First store Second / operation malfunctions / conventional NV-SRAM with the programmable resistor / step / /

PublishedMedium

Journal of Physics D / Japanese Journal of Applied Physics / Applied Physics Letters / /

Technology

RAM / CoOx-RRAM memory cell technology / shadow RAM / Random Access / SRAM / nonvolatile memory / The VLSI chip / CMOS technology / storage technology / non-volatile memory technology / OptoElectronics / http / Simulation / /

URL

http /

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