Transistor

Results: 2038



#Item
51S  Sm  mo  oo  ot  th 

S  Sm  mo  oo  ot  th 

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Source URL: madbeanpedals.com

Language: English - Date: 2015-01-31 22:16:03
52APPLIED PHYSICS LETTERS 88, 023506 共2006兲  Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors P. Cosseddu and A. Bonfiglio INFM-University of Cagliari, Department of E

APPLIED PHYSICS LETTERS 88, 023506 共2006兲 Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors P. Cosseddu and A. Bonfiglio INFM-University of Cagliari, Department of E

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Source URL: www.diee.unica.it

Language: English - Date: 2009-07-13 07:56:40
53APPLIED PHYSICS LETTERS 89, 143515 共2006兲  Towards the textile transistor: Assembly and characterization of an organic field effect transistor with a cylindrical geometry Maurizio Maccioni, Emanuele Orgiu, Piero Coss

APPLIED PHYSICS LETTERS 89, 143515 共2006兲 Towards the textile transistor: Assembly and characterization of an organic field effect transistor with a cylindrical geometry Maurizio Maccioni, Emanuele Orgiu, Piero Coss

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Source URL: www.diee.unica.it

Language: English - Date: 2009-07-13 07:56:12
54NE64535  NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ASI NE64535 is a Common

NE64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ASI NE64535 is a Common

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Source URL: f1duj.free.fr

Language: English - Date: 2009-09-18 18:37:58
55ISSN No: International Journal & Magazine of Engineering, Technology, Management and Research A Monthly Peer Reviewed Open Access International e-Journal

ISSN No: International Journal & Magazine of Engineering, Technology, Management and Research A Monthly Peer Reviewed Open Access International e-Journal

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Source URL: www.ijmetmr.com

Language: English - Date: 2014-12-10 07:02:04
56ISSN No: International Journal & Magazine of Engineering, Technology, Management and Research A Peer Reviewed Open Access International Journal

ISSN No: International Journal & Magazine of Engineering, Technology, Management and Research A Peer Reviewed Open Access International Journal

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Source URL: www.ijmetmr.com

Language: English - Date: 2015-01-13 03:12:14
57Specifications Parameter Value  OFET

Specifications Parameter Value OFET

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Source URL: www.ipms.fraunhofer.de

Language: English - Date: 2016-08-23 14:33:31
582N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifi

2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifi

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Source URL: www.fairchildsemi.com

Language: English - Date: 2016-08-23 09:31:56
59APPLIED PHYSICS LETTERS  VOLUME 85, NUMBER 23 6 DECEMBER 2004

APPLIED PHYSICS LETTERS VOLUME 85, NUMBER 23 6 DECEMBER 2004

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2004-12-28 14:46:24
60VOLUME 93, N UMBER 8  PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

VOLUME 93, N UMBER 8 PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2004-09-14 20:39:00