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Annealing / Silicide / Photoemission spectroscopy / Chemistry / Physics / Electrical engineering / Electronic engineering / High-k dielectric / Transistors


Surface and Interface 2C/2002S2-002 Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate insulator on Si
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Document Date: 2010-01-05 10:30:04


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File Size: 69,98 KB

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City

Tokyo / /

Company

ZrO2 / /

Currency

pence / /

/

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

chemical states using photoemission spectroscopy / metal / transition-metal oxides / energy positions / energy resolution / metal-oxidesemiconductor / lower binding energy side / energy / /

Organization

University of Tokyo / Japan Semiconductor Technology Academic Research Center / High-Energy Accelerator Organization / G.L. Liu Department of Applied Chemistry / /

Person

Koji Usuda / Masaharu Oshima / Masaaki Niwa / Hiroshi Kumigashira / /

Technology

crystallization / spectroscopy / radiation / laser / dielectric / /

SocialTag