Gate dielectric

Results: 28



#Item
1Electrically erasable non-volatile semiconductor memory

Electrically erasable non-volatile semiconductor memory

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Source URL: ethw.org

Language: English - Date: 2011-10-12 18:24:23
2Photon Factory Activity Report 2005 #23Part BSurface and Interface 4C,6A,15C/2004G059  Residual Order in the Interfacial SiO2 Layer

Photon Factory Activity Report 2005 #23Part BSurface and Interface 4C,6A,15C/2004G059 Residual Order in the Interfacial SiO2 Layer

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:32:23
3Surface and Interface  2C/2002S2-002 Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate insulator on Si

Surface and Interface 2C/2002S2-002 Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate insulator on Si

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:30:04
4Photon Factory Activity Report 2006 #24 Part BSurface and Interface 2C/2005S2-002  Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent

Photon Factory Activity Report 2006 #24 Part BSurface and Interface 2C/2005S2-002 Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:33:37
5Photon Factory Activity Report 2006 #24 Part BChemistry 2C/2005S2-002  Thermal decomposition of LaAlO3/SiO2/Si gate stack structures studied by

Photon Factory Activity Report 2006 #24 Part BChemistry 2C/2005S2-002 Thermal decomposition of LaAlO3/SiO2/Si gate stack structures studied by

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:34:17
6Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 In-depth profiles of Hf-based gate insulator films on Si substrates studied by angle-resolved photoemission spectroscopy

Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 In-depth profiles of Hf-based gate insulator films on Si substrates studied by angle-resolved photoemission spectroscopy

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:36:04
7Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir

Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:36:03
8Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003  Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied

Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-12-27 22:22:07
9Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002  Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate

Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002 Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:32:21
10Photon Factory Activity Report 2004 #22 Part BSurface and Interface 2C/2002S2-002  Crystallization in HfO2 gate insulators with in situ annealing

Photon Factory Activity Report 2004 #22 Part BSurface and Interface 2C/2002S2-002 Crystallization in HfO2 gate insulators with in situ annealing

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:31:27