Quantum well laser

Results: 34



#Item
1Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well G.T. Liu, A. Stintz, H. Li, K.J. Malloy and L.F. Lester The lowest room-temperature threshold current d

Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well G.T. Liu, A. Stintz, H. Li, K.J. Malloy and L.F. Lester The lowest room-temperature threshold current d

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Source URL: www.researchgate.net

Language: English
2High-performance GaInAs / GaAs quantum-dot lasers based on a single active layer. F.Schäfer,a) J.P.Reithmaier, and A. Forchel Technische Physik, Universität Würzburg, Am Hubland, DWürzburg , Germany (Received

High-performance GaInAs / GaAs quantum-dot lasers based on a single active layer. F.Schäfer,a) J.P.Reithmaier, and A. Forchel Technische Physik, Universität Würzburg, Am Hubland, DWürzburg , Germany (Received

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Source URL: www.1974eiko.co.jp

Language: English - Date: 2009-05-08 06:40:02
3GaInAsN based lasers for the 1.3 and 1.5µm wavelength range M.Fischer, D.Gollub, M.Reinhardt*, A.Forchel Technische Physik, University at Wúrzburg, Am Hubland, 97074 Wúrzburg, Germany *nanoplus Nanosystems and Technol

GaInAsN based lasers for the 1.3 and 1.5µm wavelength range M.Fischer, D.Gollub, M.Reinhardt*, A.Forchel Technische Physik, University at Wúrzburg, Am Hubland, 97074 Wúrzburg, Germany *nanoplus Nanosystems and Technol

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Source URL: www.1974eiko.co.jp

Language: English - Date: 2009-05-08 06:40:09
4SLD1332V 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well (QW) structure. 500mW high power is achieved by this QW structure.

SLD1332V 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well (QW) structure. 500mW high power is achieved by this QW structure.

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Source URL: www.sony.net

Language: English - Date: 2011-11-24 23:53:02
5750 mW High Power Laser Diode SLD336VF Description The SLD336VF is a 750 mW high power laser diode designed to have a uniform emission area that is suitable for the applications for solid-state laser excitation, measure

750 mW High Power Laser Diode SLD336VF Description The SLD336VF is a 750 mW high power laser diode designed to have a uniform emission area that is suitable for the applications for solid-state laser excitation, measure

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Source URL: www.sony.net

Language: English - Date: 2011-10-24 04:33:02
6Whispering-gallery mode lasing in GaN microdisks Hoi Wai Choi, Pui To Lai, and Soo Jin Chua GaN/Si surface-emitting microdisks overcome mirror fabrication

Whispering-gallery mode lasing in GaN microdisks Hoi Wai Choi, Pui To Lai, and Soo Jin Chua GaN/Si surface-emitting microdisks overcome mirror fabrication

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Source URL: www.eee.hku.hk

Language: English - Date: 2007-08-03 22:47:55
7Harold a hetero-structure and SOA/laser model þ Advanced laser simulations - Fabry Perot cavity modelling in 1D (Y) and 2D (YZ) - pulsed (isothermal) or CW (self-heating) conditions - Harold XY: laser cross-section mode

Harold a hetero-structure and SOA/laser model þ Advanced laser simulations - Fabry Perot cavity modelling in 1D (Y) and 2D (YZ) - pulsed (isothermal) or CW (self-heating) conditions - Harold XY: laser cross-section mode

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Source URL: www.photond.com

Language: English - Date: 2012-05-14 12:49:25
82015 TECHNICAL SUMMARIES• WWW.SPIE.ORG/PW The Moscone Center

2015 TECHNICAL SUMMARIES• WWW.SPIE.ORG/PW The Moscone Center

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Source URL: www.spie.org

Language: English - Date: 2015-04-18 04:13:38
9CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-01-23 09:11:22
103-2 Detector[removed]Terahertz Frontside-Illuminated Quantum Well Photodetector Mikhail Patrashin and HOSAKO Iwao We have demonstrated the operation of a frontside-illuminated GaAs/AlGaAs quantum well photodetector based o

3-2 Detector[removed]Terahertz Frontside-Illuminated Quantum Well Photodetector Mikhail Patrashin and HOSAKO Iwao We have demonstrated the operation of a frontside-illuminated GaAs/AlGaAs quantum well photodetector based o

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Source URL: www.nict.go.jp

Language: English - Date: 2013-11-21 20:18:13