Schottky barrier

Results: 40



#Item
11N5711 SCHOTTKY BARRIER SWITCHING DIODE SPICE MODEL: 1N5711 Features ·

1N5711 SCHOTTKY BARRIER SWITCHING DIODE SPICE MODEL: 1N5711 Features ·

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Source URL: www.nzart.org.nz

Language: English - Date: 2010-07-16 01:46:51
    2Schottky Barrier Rectifier Diode Lead-less Chip Form GENERAL DESCRIPTION AVX Schottky rectifier diodes offer unique lead-less chip packaging technology which eliminates the lead frame wire bond to give the chip top-botto

    Schottky Barrier Rectifier Diode Lead-less Chip Form GENERAL DESCRIPTION AVX Schottky rectifier diodes offer unique lead-less chip packaging technology which eliminates the lead frame wire bond to give the chip top-botto

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    Source URL: catalogs.avx.com

    - Date: 2015-09-08 09:16:47
      3APPLIED PHYSICS LETTERS 100, Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide Shriram Shivaraman,1 Lihong H. Herman,2 Farhan Rana,1 Jiwoong Park,3 and M

      APPLIED PHYSICS LETTERS 100, Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide Shriram Shivaraman,1 Lihong H. Herman,2 Farhan Rana,1 Jiwoong Park,3 and M

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      Source URL: park.chem.cornell.edu

      Language: English - Date: 2014-09-27 18:35:16
      4Sonderforschungsbereich 595 Elektrische Ermüdung in Funktionswerkstoffen Sonderkolloquium Sommersemester 2014

      Sonderforschungsbereich 595 Elektrische Ermüdung in Funktionswerkstoffen Sonderkolloquium Sommersemester 2014

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      Source URL: www.sfb595.tu-darmstadt.de

      Language: English - Date: 2016-08-18 22:20:42
      5Department of Physics & Engineering  Masters’ Thesis Defense Design of Nanomachined Pyroelectric Detectors for Low Thermal Conductance

      Department of Physics & Engineering Masters’ Thesis Defense Design of Nanomachined Pyroelectric Detectors for Low Thermal Conductance

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      Source URL: oscar.desu.edu

      Language: English - Date: 2013-10-28 13:30:25
      6Fabrication and characteristics of Hg/n-bulk GaN schottky diode. LEonardo Journal of Sciences 2015;26:.

      Fabrication and characteristics of Hg/n-bulk GaN schottky diode. LEonardo Journal of Sciences 2015;26:.

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      Source URL: ljs.academicdirect.org

      Language: English - Date: 2015-04-16 15:03:48
      7Photon Factory Activity Report 2010 #28 Part BSurface and Interface 2C/2008S2-003 Controlling band alignments by engineering interface dipoles at oxide heterointerfaces

      Photon Factory Activity Report 2010 #28 Part BSurface and Interface 2C/2008S2-003 Controlling band alignments by engineering interface dipoles at oxide heterointerfaces

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      Source URL: pfwww.kek.jp

      Language: English - Date: 2012-01-30 04:32:45
      83 Surfaces and Interfaces 3-1 Structure and Initial Oxidation of the SiCSurface The oxidation of semiconductors is an important topic in the context of the fabrication of electronic devices, as well as of strong i

      3 Surfaces and Interfaces 3-1 Structure and Initial Oxidation of the SiCSurface The oxidation of semiconductors is an important topic in the context of the fabrication of electronic devices, as well as of strong i

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      Source URL: pfwww.kek.jp

      Language: English - Date: 2010-01-05 10:34:21
      9Photon Factory Activity Report 2007 #25 Part BSurface and Interface 2C/2005S2-002  Orientation dependence of Schottky barrier height for

      Photon Factory Activity Report 2007 #25 Part BSurface and Interface 2C/2005S2-002 Orientation dependence of Schottky barrier height for

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      Source URL: pfwww.kek.jp

      Language: English - Date: 2010-01-05 10:34:51
      10Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003  Termination dependence of the Schottky barrier height for

      Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 Termination dependence of the Schottky barrier height for

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      Source URL: pfwww.kek.jp

      Language: English - Date: 2010-01-05 10:36:05